Conductivity corrections in a strongly correlated and disordered 
two-dimensional electron system

Kvon, Z. D.; Estibals, O.; Gusev, G. M.; Portal, J. C.

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Conductivity corrections in a strongly correlated and disordered two-dimensional electron system

MPS-Authors

/persons/resource/persons280400

Portal, J. C.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Kvon, Z. D., Estibals, O., Gusev, G. M., & Portal, J. C. (2002). Conductivity corrections in a strongly correlated and disordered two-dimensional electron system. Physical Review B, 65(16): 161304.

Cite as: https://hdl.handle.net/21.11116/0000-000E-EAC5-C

Abstract

We have measured the resistivity rho of a dilute two-
dimensional electron gas near the (111) silicon surface as a
function of a temperature. Since the valley degeneracy in such
structures g(v) is 6, the dimensionless radius r(s) approaches
50 at electron densities significantly larger than in
previously studied (100)Si or p-AlGaAs/GaAs systems. We have
observed a nonmonotonical behavior of rho(T), the resistivity
slowly decreasing with the temperature decreasing for
temperatures above Tapproximate to1 K and increasing at lower
temperatures for electron densities corresponding to rhosimilar
toh/e(2), when the metal-insulator transition is expected. Such
nonmonotonic behavior can be tentatively described by
corrections to the conductivity due to electron-electron
interaction with negative Fermi-liquid constant
F(0)(sigma)approximate to-0.25.