English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT

Released

Journal Article

Magnetotransport properties of La2/3Sr1/3MnO3 thin film

MPS-Authors
/persons/resource/persons280271

Mandal,  P.
Scientific Facility Crystal Growth (Masahiko Isobe), Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280090

Jansen,  A. G. M.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

External Resource
No external resources are shared
Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Mandal, P., Choudhury, P., Bärner, K., von Helmolt, R., & Jansen, A. G. M. (2002). Magnetotransport properties of La2/3Sr1/3MnO3 thin film. Journal of Applied Physics, 91(9), 5940-5944.


Cite as: https://hdl.handle.net/21.11116/0000-000E-E99D-B
Abstract
We report the temperature and magnetic field dependence of the
resistivity of La2/3Sr1/3MnO3 thin film over a wide temperature
range and in high magnetic fields up to 20 T. Both above and
below the ferromagnetic (FM) transition, the field dependence
of the magnetoresistance (MR) can be described well using the
extended Mott hopping conduction model. The large MR is
proportional to the Brillouin function B-J in the FM phase and
to B-J(2) in the paramagnetic state which is consistent with
this model. The value of spin moment J deduced from the
temperature and magnetic field dependence of the MR is large
(similar to60) in the vicinity of the FM transition. This large
value of J has been attributed to the presence of magnetic
clusters due to the short-range FM ordering. (C) 2002 American
Institute of Physics.