Item

Abstract

The ripples at the interfaces of five-period Si/Ge multilayer
samples, grown on 0.3degrees miscut (0 0 1) Si are studied
systematically. Five samples with Si spacer layer thicknesses
ranging from 12.6 to 102.7 nm and 6 monolayer Ge were
investigated. From the X-ray reflectivity investigations a
characteristic step bunching morphology is found, with a ripple
period which increases by more than 30% if the Si spacer
thickness is doubled from about 13 to 25 nm, but does not
change further with increasing spacer. These results shed light
on the ongoing discussion about the relative importance of
kinetic versus strain-related origin of the ripple pattern. (C)
2002 Elsevier Science B.V. All rights reserved.