Electron-phonon effects on the direct band gap in semiconductors: LCAO 
calculations

Olguín, D.; Cardona, M.; Cantarero, A.

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Electron-phonon effects on the direct band gap in semiconductors: LCAO calculations

MPS-Authors

/persons/resource/persons279830

Cardona, M.
Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Olguín, D., Cardona, M., & Cantarero, A. (2002). Electron-phonon effects on the direct band gap in semiconductors: LCAO calculations. Solid State Communications, 122(11), 575-589.

Cite as: https://hdl.handle.net/21.11116/0000-000E-E8A5-2

Abstract

Using a perturbative treatment of the electron-phonon
interaction, we have studied the effect of phonons on the
direct band gap of conventional semiconductors. Our
calculations are performed in the framework of the tight-
binding linear combination of atomic orbitals (LCAO) approach.
Within this scheme we have calculated the temperature and
isotopic mass dependence of the lowest direct band gap of
several semiconductors with diamond and zincblende structure.
Our results reproduce the overall trend of available
experimental data for the band gap as a function of
temperature, as well as give correctly the mass dependence of
the band gap on isotopic. A calculation of conduction band
intervalley deformation potentials is also reported. Finally,
calculated Debye-Waller factors are compared with X-ray and
EXAFS experimental results. (C) 2002 Elsevier Science Ltd. All
rights reserved.