English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse
  1. View item / 
  2. Item Summary

Item

ITEM ACTIONSEXPORT
Add to Basket
  Local TagsRelease HistoryDetailsSummary

Released
Journal Article

Semiconductor tubes, rods and rings of nanometer and micrometer dimension

MPS-Authors
/persons/resource/persons280485

Schmidt,  O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons279881

Deneke,  Ch.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280277

Manz,  Y. M.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280324

Müller,  C.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

External Resource
No external resources are shared
Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Schmidt, O. G., Deneke, C., Manz, Y. M., & Müller, C. (2002). Semiconductor tubes, rods and rings of nanometer and micrometer dimension. Physica E, 13(2-4), 969-973.


Cite as: https://hdl.handle.net/21.11116/0000-000E-EFB5-9
Abstract
Strained semiconductor bilayers are released from their
substrate and formed into free-standing tubes, rods and rings
on semiconductor surfaces. We present nanotubes based on the
InGaAs/GaAs, SiGe/Si, and InGaP material system. The inner
diameters of our tubes vary from 15 to > 500 nm. We present
rolled-up nanotubes, which have performed up to 30 revolutions.
The wall thickness of the nanotubes depends on the number of
rotations. as a consequence , the inner to outer diameter ratio
can be tuned over a wide range, i.e from 1 to 0.125. In the
latter case the nanotubes become nanorods. Strained layers are
bent in two directions, vertical and horizantal. The result are
ultra-thin and ring-like vertical free-standing membranes. The
wide range of possible materials and structural properties make
these tubes and rings interesting candidates for fundamental
investigations as well as for applications (C) 2002 Elsevier
Science B.V. All rights reserved.