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Self-assembled semiconductor nanostructures: climbing up the ladder of order

MPS-Authors
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Schmidt,  O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Kiravittaya,  S.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Nakamura,  Y.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Heidemeyer,  H.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Songmuang,  R.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Müller,  C.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Jin-Phillipp,  N. Y.
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;

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Eberl,  K.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Schmidt, O. G., Kiravittaya, S., Nakamura, Y., Heidemeyer, H., Songmuang, R., Müller, C., et al. (2002). Self-assembled semiconductor nanostructures: climbing up the ladder of order. Surface Science, 514(1-3), 10-18.


Cite as: https://hdl.handle.net/21.11116/0000-000E-EFB3-B
Abstract
Different growth techniques and growth strategies are presented
to climb up the hierarchy of order in the field of self-
assembled semiconductor nanostructures. In a first step we
report a significant improvement of the nanostructure size
homogeneity by using either a repetitive desorption and
regrowth procedure or by applying extremely low growth rates at
high growth temperatures. With this approach an InAs/GaAs
quantum dot (QD) ensemble with a height distribution of +/-5%
and a final photoluminescence (PL) peak line width of 19 meV at
room temperature was fabricated. After capping the low growth
rate QDs with GaAs, well-developed rhombus-shaped structures
with holes in their center are observed. The PL of closely
stacked InAs QDs exhibits a line width of 16 meV at low
temperature. Remarkable lateral alignment into square arrays of
self-assembled SiGe islands with a pronounced size and shape
homogeneity is achieved by deposition near their thermodynamic
equilibrium using liquid phase epitaxy. The combination of
self-assembly with conventional pre-patterning leads to long-
range lateral order of In(Ga)As QDs on GaAs(0 0 1). A three-
dimensional crystal is fabricated by stacking multiple layers
and vertically aligned In(Ga)As QDs onto a pre-patterned GaAs(0
0 1) substrate. The structure shows good PL properties at room
temperature. (C) 2002 Elsevier Science B.V. All rights
reserved.