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Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor

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Smet,  J. H.
Research Group Solid State Nanophysics (Jurgen H. Smet), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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von Klitzing,  K.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Smet, J. H., Deutschmann, R. A., Ertl, F., Wegscheider, W., Abstreiter, G., & von Klitzing, K. (2002). Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor. Nature, 415(6869), 281-286.


Cite as: https://hdl.handle.net/21.11116/0000-000E-EEE1-8
Abstract
Semiconductors are ubiquitous in device electronics, because
their charge distributions can be conveniently manipulated with
voltages to perform logic operations. Achieving a similar level
of control over the spin degrees of freedom, either from
electrons or nuclei, could provide intriguing prospects for
both information processing and the study of fundamental solid-
state physics issues. Here we report procedures that carry out
the controlled transfer of spin angular momentum between
electrons-confined to two dimensions and subjected to a
perpendicular magnetic field-and the nuclei of the host
semiconductor, using gate voltages only. We show that the spin
transfer rate can be enhanced near a ferromagnetic ground state
of the electron system, and that the induced nuclear spin
polarization can be subsequently stored and 'read out'. These
techniques can also be combined into a spectroscopic tool to
detect the low-energy collective excitations in the electron
system that promote the spin transfer. The existence of such
excitations is contingent on appropriate electron-electron
correlations, and these can be tuned by changing, for example,
the electron density via a gate voltage.