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Determination of the phonon dispersion of zinc blende (3C) silicon carbide by inelastic x-ray scattering

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Serrano,  J.
Department Solid State Spectroscopy (Bernhard Keimer), Max Planck Institute for Solid State Research, Max Planck Society;

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Strempfer,  J.
Department Solid State Spectroscopy (Bernhard Keimer), Max Planck Institute for Solid State Research, Max Planck Society;

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Cardona,  M.
Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Serrano, J., Strempfer, J., Cardona, M., Schwoerer-Böhning, M., Requardt, H., Lorenzen, M., et al. (2002). Determination of the phonon dispersion of zinc blende (3C) silicon carbide by inelastic x-ray scattering. Applied Physics Letters, 80(23), 4360-4362.


Cite as: https://hdl.handle.net/21.11116/0000-000E-EED5-6
Abstract
We present an experimental and theoretical investigation of the
phonon dispersion relations in zinc blende (3C) SiC. The
experimental data were obtained for the entire Brillouin zone
by inelastic x-ray scattering (IXS) using a synchrotron
radiation source. Eigenvector analysis is performed with the
aid of state-of-the-art linear response first principles
calculations based on density functional theory. The
theoretical predictions reproduce the experimental phonon
dispersion remarkably well. These results are compared with
data obtained previously for the <111> direction by Raman
spectroscopy using several SiC polytypes and the backfolding
technique. IXS data for 4H modification along the c axis are
also reported. (C) 2002 American Institute of Physics.