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Journal Article

Phase transition and magnetic anisotropy of (La,Sr)MnO3 thin films

MPS-Authors
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Wang,  Z. H.
Scientific Facility Thin Film Technology (Gennady Logvenov), Max Planck Institute for Solid State Research, Max Planck Society;

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Gross,  G. M.
Scientific Facility Thin Film Technology (Gennady Logvenov), Max Planck Institute for Solid State Research, Max Planck Society;

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Razavi,  F. S.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Thin Film Technology (Gennady Logvenov), Max Planck Institute for Solid State Research, Max Planck Society;

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Habermeier,  H.-U.
Scientific Facility Thin Film Technology (Gennady Logvenov), Max Planck Institute for Solid State Research, Max Planck Society;
Department Solid State Spectroscopy (Bernhard Keimer), Max Planck Institute for Solid State Research, Max Planck Society;
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Wang, Z. H., Kronmüller, H., Lebedev, O. I., Gross, G. M., Razavi, F. S., Habermeier, H.-U., et al. (2002). Phase transition and magnetic anisotropy of (La,Sr)MnO3 thin films. Physical Review B, 65(5): 054411.


Cite as: https://hdl.handle.net/21.11116/0000-000E-EB23-2
Abstract
The magnetic proper-ties and their correlation with the
microstructure and electrical transport are investigated in
La0.88Sr0.1MnO3 films grown on (100)SrTiO3 Single crystal
substrates with thickness ranging from 100 to 2500 Angstrom.
The ultrathin film (t = 100 Angstrom) has a single
ferromagnetic transition (FMT) at T-c of 250 K, whereas the
thicker films exhibit two FMTs, with the main one at a lowered
T-c of 200 K while the minor one around 300 K. Furthermore, a
thickness dependent magnetic anisotropy has been found,
strongly indicating the existence of strain effect, which is
also revealed by the transmission electron microscopy study.
The suppressed Jahn-Teller distortion (JTD) by the epitaxial
strain, and the recovered JTD due to the strain relexation are
suggested to explain the metallic behavior in thin films and
the insulating behavior in the thick film (t = 2500 Angstrom),
repectively.