Raman-active modes of porous gallium phosphide at high pressures and low 
temperatures

Ursaki, V. V.; Manjón, F. J.; Syassen, K.; Tiginyanu, I. M.; Irmer, G.; Monecke, J.

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Raman-active modes of porous gallium phosphide at high pressures and low temperatures

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Manjón, F. J.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Syassen, K.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Department Solid State Quantum Electronics (Jochen Mannhart), Max Planck Institute for Solid State Research, Max Planck Society;

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Ursaki, V. V., Manjón, F. J., Syassen, K., Tiginyanu, I. M., Irmer, G., & Monecke, J. (2002). Raman-active modes of porous gallium phosphide at high pressures and low temperatures. Journal of Physics: Condensed Matter, 14, 13879-13887.

Cite as: https://hdl.handle.net/21.11116/0000-000E-F460-2

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