Liquid Phase Epitaxy Centrifuge for Growth of Ultra-pure Gallium Arsenide for 
Far Infrared Photoconductors

Katterloher, R.; Jakob, G.; Konuma, M.; Krabbe, A.; Haegel, N.; Samperi, S. A.; Beeman, J. W.; Haller, E. E.

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Liquid Phase Epitaxy Centrifuge for Growth of Ultra-pure Gallium Arsenide for Far Infrared Photoconductors

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Konuma, M.
Scientific Facility Interface Analysis (Ulrich Starke), Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Katterloher, R., Jakob, G., Konuma, M., Krabbe, A., Haegel, N., Samperi, S. A., Beeman, J. W., & Haller, E. E. (2002). Liquid Phase Epitaxy Centrifuge for Growth of Ultra-pure Gallium Arsenide for Far Infrared Photoconductors. In Infrared Spaceborne Remote Sensing IX (pp. 200-208). Bellingham, Washington, USA: The International Society for Optical Engineering.

引用: https://hdl.handle.net/21.11116/0000-000E-F2D7-E

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