Probing the electronic properties of disordered two-dimensional systems by 
means of resonant tunnelling

Dubrovskii, Y. V.; Vdovin, E. E.; Patané, A.; Brounkov, P. N.; Larkin, I. A.; Eaves, L.; Main, P. C.; Maude, D. K.; Portal, J. C.; Ivanov, D. Y.; Khanin, Y. N.; Sirotkin, V. V.; Levin, A.; Henini, M.; Hill, G.

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Probing the electronic properties of disordered two-dimensional systems by means of resonant tunnelling

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Maude, D. K.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Portal, J. C.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Dubrovskii, Y. V., Vdovin, E. E., Patané, A., Brounkov, P. N., Larkin, I. A., Eaves, L., et al. (2001). Probing the electronic properties of disordered two-dimensional systems by means of resonant tunnelling. Nanotechnology, 12(4), 491-495.

Cite as: https://hdl.handle.net/21.11116/0000-000E-EFE1-7

Abstract

We investigate resonant tunnelling in GaAs/(AlGa)As double-
barrier resonant-tunnelling diodes in which a single layer of
InAs self-assembled quantum dots is embedded in the centre of
the GaAs quantum well. The dots provide a well-defined and
controllable source of disorder in the well and we use resonant
tunnelling to study the effect of this disorder on the
electronic properties of the well.