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Journal Article

Optical anisotropy of (001)-GaAs surface quantum wells

MPS-Authors
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Rönnow,  D.
Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Santos,  P. V.
Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Cardona,  M.
Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons279906

Eberl,  K.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Lastras-Martínez, L. F., Rönnow, D., Santos, P. V., Cardona, M., & Eberl, K. (2001). Optical anisotropy of (001)-GaAs surface quantum wells. Physical Review B, 64(24): 245303.


Cite as: https://hdl.handle.net/21.11116/0000-000E-EFDD-D
Abstract
We report a reflectance difference spectroscopy (RDS) study of
the optical anisotropy of GaAs:(001) Surface quantum wells
consisting of a thin GaAs layer (3-30 nm thick) embedded
between an arsenic reconstructed surface and an AlAs barrier.
The RDS spectra display anisotropic contributions from the free
Surface and from the GaAs/AlAs interface. By comparing RDS
spectra for the c(4x4) and (2x4) Surface reconstructions, we
separate these two contributions, and demonstrate that the
anisotropy around the E-1 and E-1 + Delta(1) transitions
comprises a component originating from modifications of bulk
states near the surface. The latter is attributed to
anisotropic strains induced by the surface reconstruction. The
experimental data Lire well described by a model for the RDS
response of the multilayer structures, which also takes into
account the blue energy shifts and the changes in oscillator
strength of the E-1 and E-1 + Delta(1) transitions induced by
quantum-well confinement.