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Journal Article

Si-based resonant inter- and intraband tunneling diodes

MPS-Authors
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Eberl,  K.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Duschl,  R.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280485

Schmidt,  O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Denker,  U.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Haug,  R.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Eberl, K., Duschl, R., Schmidt, O. G., Denker, U., & Haug, R. (2001). Si-based resonant inter- and intraband tunneling diodes. Journal of Crystal Growth, 227, 770-776.


Cite as: https://hdl.handle.net/21.11116/0000-000E-F18F-1
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