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Journal Article

Field-effect transistor made of individual V2O5 nanofibers

MPS-Authors
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Kim,  G. T.
Department Solid State Spectroscopy (Bernhard Keimer), Max Planck Institute for Solid State Research, Max Planck Society;

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Muster,  J.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Krstic,  V.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Park,  Y. W.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Roth,  S.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Burghard,  M.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Kim, G. T., Muster, J., Krstic, V., Park, J. G., Park, Y. W., Roth, S., et al. (2000). Field-effect transistor made of individual V2O5 nanofibers. Applied Physics Letters, 76, 1875-1877.


Cite as: https://hdl.handle.net/21.11116/0000-000E-F2ED-6
Abstract
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