High-resolution DLTS studies of vacancy-related defects in irradiated and in 
ion-implanted n-type silicon

Evans-Freeman, J. H.; Peaker, A. R.; Hawkins, I. D.; Kan, P. Y. Y.; Terry, J.; Rubaldo, L.; Ahmed, M.; Watts, S.; Dobaczewski, L.

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High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon

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Rubaldo, L.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Evans-Freeman, J. H., Peaker, A. R., Hawkins, I. D., Kan, P. Y. Y., Terry, J., Rubaldo, L., et al. (2000). High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon. Materials Science in Semiconductor Processing, 3, 237-241.

Cite as: https://hdl.handle.net/21.11116/0000-000E-F21D-1

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