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Journal Article

Influence of cooling rate on the dislocations and related luminescence in LPE SiGe layers grown on Si (100) substrates

MPS-Authors
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Konuma,  M.
Scientific Facility Interface Analysis (Ulrich Starke), Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Weber,  J.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Sembian, A. M., Banhart, F., Konuma, M., Weber, J., Babu, S. M., & Ramasamy, P. (2000). Influence of cooling rate on the dislocations and related luminescence in LPE SiGe layers grown on Si (100) substrates. Thin Solid Films, 372, 1-5.


Cite as: https://hdl.handle.net/21.11116/0000-000E-E571-0
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