Preparation and optical properties of Ge and C-induced Ge quantum dots on Si

Eberl, K.; Schmidt, O. G.; Kienzle, O.; Ernst, F.

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Preparation and optical properties of Ge and C-induced Ge quantum dots on Si

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Eberl, K.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Schmidt, O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Eberl, K., Schmidt, O. G., Kienzle, O., & Ernst, F. (2000). Preparation and optical properties of Ge and C-induced Ge quantum dots on Si. Materials Research Society Symposia Proceedings, 571, 355-363.

Cite as: https://hdl.handle.net/21.11116/0000-000E-EA15-3

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