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Strain and band-edge alignment in single and multiple layers of self-assembled Ge/Si and GeSi/Si islands

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Schmidt,  O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Eberl,  K.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Schmidt, O. G., Eberl, K., & Rau, Y. (2000). Strain and band-edge alignment in single and multiple layers of self-assembled Ge/Si and GeSi/Si islands. Physical Review B, 62, 16715-16720.


Cite as: https://hdl.handle.net/21.11116/0000-000E-E619-3
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