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Conference Paper

Temperature dependence of the magnetoresistance minima in n-channel Si/Si1-xGex modulation-doped quantum well structures

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Maude,  D. K.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Portal,  J. C.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Shin, D. H., Becker, C. E., Harris, J. J., Fernandez, J. M., Woods, N. J., Thornton, T. J., et al. (1999). Temperature dependence of the magnetoresistance minima in n-channel Si/Si1-xGex modulation-doped quantum well structures. In Proceedings of the Twenty-Fifth International Symposium on Compound Semiconductors (pp. 343-347). Bristol: IOP Publishing LTD.


Cite as: https://hdl.handle.net/21.11116/0000-000E-EBA5-F
Abstract
Shubnikov-de Haas (SdH) measurements between 0.04 and 4.2K have
been performed on two modulation-doped n-type Si/Si0.7Ge0.3
heterostructures, and the temperature dependence of the
resistivity minima in the SdH oscillations at integer filling
factor was analysed. Above 1 K, the resistivity is thermally
activated, corresponding to rho(xx)(min) proportional to
sigma(xx)(min) proportional to exp(-E-a/2kT) where the
activation energy, E-a, is expected to be close to the
cyclotron energy; however, the values of E-a obtained from
experiment are much lower than this. The difference has been
attributed to the fact that the Lande g factor is larger than
the bulk value of 2. The temperature dependence of the
resistivity deviated from this activated behaviour below 1K, as
found in measurements on disordered system, and this is
interpreted as being due to hopping conduction.