Defect diagnostics using scanning photoluminescence in multicrystalline silicon.

Tarasov, I.; Ostapenko, S.; Feifer, V.; McHugo, S.; Koveshnikov, S. V.; Weber, J.; Haessler, C.; Reisner, E. U.

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Defect diagnostics using scanning photoluminescence in multicrystalline silicon.

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Weber, J.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Tarasov, I., Ostapenko, S., Feifer, V., McHugo, S., Koveshnikov, S. V., Weber, J., et al. (1999). Defect diagnostics using scanning photoluminescence in multicrystalline silicon. Physica B, 274, 549-552.

Cite as: https://hdl.handle.net/21.11116/0000-000E-D6B0-9

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