Dynamics of lateral grain growth during the laser interference crystallization 
of a-Si.

Aichmayr, G.; Toet, D.; Mulato, M.; Santos, P. V.; Spangenberg, A.; Christiansen, S.; Albrecht, M.; Strunk, H. P.

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Dynamics of lateral grain growth during the laser interference crystallization of a-Si.

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Santos, P. V.
Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Spangenberg, A.
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;

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Aichmayr, G., Toet, D., Mulato, M., Santos, P. V., Spangenberg, A., Christiansen, S., et al. (1999). Dynamics of lateral grain growth during the laser interference crystallization of a-Si. Journal of Applied Physics, 85, 4010-4023.

Cite as: https://hdl.handle.net/21.11116/0000-000E-D732-7

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