Quantum Hall effect induced by electron-electron interaction in disordered GaAs 
layers with a three-dimensional spectrum.

Murzin, S. S.; Claus, I.; Jansen, A. G. M.; Moshegov, N. T.; Toropov, A. I.; Eberl, K.

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Quantum Hall effect induced by electron-electron interaction in disordered GaAs layers with a three-dimensional spectrum.

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Murzin, S. S.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Jansen, A. G. M.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Eberl, K.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Murzin, S. S., Claus, I., Jansen, A. G. M., Moshegov, N. T., Toropov, A. I., & Eberl, K. (1999). Quantum Hall effect induced by electron-electron interaction in disordered GaAs layers with a three-dimensional spectrum. Physical Review B, 59, 7330-7333.

Cite as: https://hdl.handle.net/21.11116/0000-000E-DF04-3

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