Residual impurities in high purity GaAs layers grown by liquid phase epitaxy in 
H2-Ar atmosphere.

Czech, E.; Götz, G.; Cristiani, G.; Konuma, M.

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Residual impurities in high purity GaAs layers grown by liquid phase epitaxy in H2-Ar atmosphere.

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Czech, E.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Götz, G.
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;

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Cristiani, G.
Scientific Facility Thin Film Technology (Gennady Logvenov), Max Planck Institute for Solid State Research, Max Planck Society;

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Konuma, M.
Scientific Facility Interface Analysis (Ulrich Starke), Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Czech, E., Götz, G., Cristiani, G., & Konuma, M. (1999). Residual impurities in high purity GaAs layers grown by liquid phase epitaxy in H2-Ar atmosphere. Journal of Crystal Growth, 198-199, 1087-1091.

Cite as: https://hdl.handle.net/21.11116/0000-000E-DF9E-6

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