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C-induced Ge dots: a versatile tool to fabricate ultra-small Ge nanostructures.

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Schmidt,  O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Eberl,  K.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Schmidt, O. G., Lange, C., Eberl, K., Kienzle, O., & Ernst, F. (1998). C-induced Ge dots: a versatile tool to fabricate ultra-small Ge nanostructures. Thin Solid Films, 336, 248-251.


Cite as: https://hdl.handle.net/21.11116/0000-000E-DF36-B
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