Photoluminescence of tensile strained, exactly strain compensated, and 
compressively strained Si1-x-yGexCy layers on Si.

Schmidt, O. G.; Eberl, K.

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Photoluminescence of tensile strained, exactly strain compensated, and compressively strained Si_1-x-yGe_xC_y layers on Si.

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Schmidt, O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Eberl, K.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Schmidt, O. G., & Eberl, K. (1998). Photoluminescence of tensile strained, exactly strain compensated, and compressively strained Si_1-x-yGe_xC_y layers on Si. Physical Review Letters, 80, 3396-3399.

Cite as: https://hdl.handle.net/21.11116/0000-000E-DC74-8

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