Photoluminescence characterization of Te-doped GaSb layers grown by 
liquid-phase epitaxy from Bi melts.

Gladkov, P.; Monova, E.; Weber, J.

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Photoluminescence characterization of Te-doped GaSb layers grown by liquid-phase epitaxy from Bi melts.

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Weber, J.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Gladkov, P., Monova, E., & Weber, J. (1997). Photoluminescence characterization of Te-doped GaSb layers grown by liquid-phase epitaxy from Bi melts. Semiconductor Science and Technology, 12, 1409-1415.

Cite as: https://hdl.handle.net/21.11116/0000-000E-D894-7

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