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Abstract

We revisit recent work on the generation of extreme optical events via nonlinear dynamics in silicon waveguides. The underlying processes, modulation instability and stimulated Raman scattering, are able to reshape normally distributed initial conditions into skewed output statistics whose properties can be tailored by controlling experimental variables. While these are both gain processes, they bear fundamental differences: modulation instability is a broadband parametric process, whereas stimulated Raman scattering is a narrowband inelastic process. As a result, they respond to different forms of input noise. Specifically, the extreme events generated spontaneously by modulation instability evidence a strong sensitivity to a particular input noise component. This sensitivity can be controllably seeded to generate coherent supercontinuum radiation, which also offers a means to alleviate conventional free-carrier limitations to chip-scale spectral broadening.