A 67-116-GHz Cryogenic Low-Noise Amplifier in a 50-nm InGaAs Metamorphic HEMT 
Technology

Thome, Fabian; Schäfer, Frank; Türk, Sener; Yagoubov, Pavel; Leuther, Arnulf

doi:10.1109/LMWC.2021.3134462

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A 67-116-GHz Cryogenic Low-Noise Amplifier in a 50-nm InGaAs Metamorphic HEMT Technology

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Schäfer, Frank
Max Planck Institute for Radio Astronomy, Max Planck Society;

Türk, Sener
Max Planck Institute for Radio Astronomy, Max Planck Society;

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Thome, F., Schäfer, F., Türk, S., Yagoubov, P., & Leuther, A. (2022). A 67-116-GHz Cryogenic Low-Noise Amplifier in a 50-nm InGaAs Metamorphic HEMT Technology. IEEE Microwave and Wireless Components Letters, 32(5), 430-433. doi:10.1109/LMWC.2021.3134462.

Cite as: https://hdl.handle.net/21.11116/0000-000C-C90D-4

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