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Near IR bandgap semiconducting 2D conjugated metal‐organic framework with rhombic lattice and high mobility

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Feng,  Xinliang       
Department of Synthetic Materials and Functional Devices (SMFD), Max Planck Institute of Microstructure Physics, Max Planck Society;

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Citation

Sporrer, L., Zhou, G., Wang, M., Balos, V., Revuelta, S., Jastrzembski, K., et al. (2023). Near IR bandgap semiconducting 2D conjugated metal‐organic framework with rhombic lattice and high mobility. Angewandte Chemie International Edition, 62(25): e202300186. doi:10.1002/anie.202300186.


Cite as: https://hdl.handle.net/21.11116/0000-000C-CB2F-C
Abstract
Two-dimensional conjugated metal-organic frameworks (2D c-MOFs) are emerging as a unique class of electronic materials. However, 2D c-MOFs with band gaps in the Vis-NIR and high charge carrier mobility are rare. Most of the reported semiconducting 2D c-MOFs are metallic (i.e. gapless), which largely limits their use in logic devices. Herein, we design a phenanthrotriphenylene-based, D2h-symmetric π-extended ligand (OHPTP), and synthesize the first rhombic 2D c-MOF single crystals (Cu2(OHPTP)). The continuous rotation electron diffraction (cRED) analysis unveils the orthorhombic crystal structure at the atomic level with a unique AB layer stacking. The Cu2(OHPTP) is a p-type semiconductor with an indirect band gap of ~0.50 eV and exhibits high electrical conductivity of 0.10 S cm-1 and high charge carrier mobility of ~10.0 cm2V-1s-1. Theoretical calculations underline the predominant role of the out-of-plane charge transport in this semiquinone-based 2D c-MOF.