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Abstract

Defects can strongly influence the electronic, optical and mechanical properties of 2D materials, making defect stability under different thermodynamic conditions crucial for material-property engineering. In this paper, we present an account of the structural and electronic characteristics of point defects in monolayer transition metal dichalcogenides MX₂ with M=Mo/W and X= S/Se, calculated with density-functional theory using the hybrid HSE06 exchange correlation functional including many-body dispersion corrections. For the simulation of charged defects, we employ a charge compensation scheme based on the virtual crystal approximation (VCA). We relate the stability and the electronic structure of charged vacancy defects in monolayer MoS₂ to an explicit calculation of the S monovacancy in MoS₂ supported on Au(111), and find convincing indication that the defect is negatively charged. Moreover, we show that the finite-temperature vibrational contributions to the free energy of defect formation can change the stability transition between adatoms and monovacancies by 300--400 K. Finally, we probe defect vibrational properties by calculating a tip-enhanced Raman scattering image of a vibrational mode of a MoS₂ cluster with and without an S monovacancy.