Correlating elemental compositions and charge carrier profiles in ultra-pure 
GaN/AlGaN stacks grown by molecular beam epitaxy

Schmult, Stefan; Appelt, Pascal; Silva, Claudia; Wirth, Steffen; Wachowiak, Andre; Großer, Andreas; Mikolajick, Thomas

doi:10.1116/6.0002652

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Correlating elemental compositions and charge carrier profiles in ultra-pure GaN/AlGaN stacks grown by molecular beam epitaxy

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Wirth, Steffen
Steffen Wirth, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Schmult, S., Appelt, P., Silva, C., Wirth, S., Wachowiak, A., Großer, A., et al. (2023). Correlating elemental compositions and charge carrier profiles in ultra-pure GaN/AlGaN stacks grown by molecular beam epitaxy. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 41(4): 042702, pp. 1-6. doi:10.1116/6.0002652.

Cite as: https://hdl.handle.net/21.11116/0000-000D-4045-D

Abstract

Inconsistencies in the concentrations of unintentional donor impurities and free charge carriers in GaN/AlGaN layer stacks hosting a two-dimensional electron gas (2DEG) can be attributed to the measurement procedure and solely depend on the way in which the free charge carrier concentration is extracted. Particularly, when the 2DEG acts as the bottom electrode in capacitance versus voltage measurements, unphysically low concentrations of free charges are calculated. This originates from the depletion of the 2DEG and the accompanying disappearance of the bottom electrode. It is shown that, for the case of a defined (non-vanishing) bottom electrode, the levels of donor impurities and resulting free charges consistently match. © 2023 Author(s).