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Journal Article

The penta-hexa silicene: A promising candidate for intrinsic room temperature magnetic semiconductor

MPS-Authors

Tao,  Kun
Max Planck Institute of Microstructure Physics, Max Planck Society;

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Stepanyuk,  V. S.
Max Planck Institute of Microstructure Physics, Max Planck Society;

External Resource

https://doi.org/10.1063/5.0151113
(Publisher version)

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Citation

Tao, K., Chen, R., Kang, J., Xue, D., Stepanyuk, V. S., & Jia, C. (2023). The penta-hexa silicene: A promising candidate for intrinsic room temperature magnetic semiconductor. Applied Physics Letters, 122(12): 212105. doi:10.1063/5.0151113.


Cite as: https://hdl.handle.net/21.11116/0000-000D-5AAE-B
Abstract
Performing ab initio calculations, we investigate electronic and magnetic properties of a silicon allotrope (PH-silicene) composed entirely by six silicon pentagons and two silicon hexagons. The dynamically and mechanically stable PH-silicene hosts two-dimensional honeycomb spin structures, which can be antiferromagnetic, ferromagnetic, or ferrimagnetic depending on the applied tensile strain and/or number of stacked layers. In particular, the transition temperature of an in-plane antiferromagnetic ground state and a strain-induced ferromagnetic state of monolayer PH-silicene is found to be around 533 and 80 K, respectively. This unusual metal-free magnetism can be explained by the d0 charge transfer mechanism. On the other hand, we show that the PH-silicene is an indirect semiconductor with the bandgap of 0.585 eV. When stacking up to 4-layers, they vary from the semiconductor, the semimetal to the normal metal. Our findings suggest PH-silicene as a promising candidate for the room temperature magnetic semiconductor and will pave a way for silicon based spintronic devices.