Determining the Number of Graphene Nanoribbons in Dual-Gate Field-Effect 
Transistors

Zhang, Jian; Barin, Gabriela Borin; Furrer, Roman; Du, Cheng-Zhuo; Wang, Xiao-Ye; Müllen, Klaus; Ruffieux, Pascal; Fasel, Roman; Calame, Michel; Perrin, Mickael L.

doi:10.1021/acs.nanolett.3c01931

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Determining the Number of Graphene Nanoribbons in Dual-Gate Field-Effect Transistors

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Müllen, Klaus
Dept. Müllen: Synthetic Chemistry, MPI for Polymer Research, Max Planck Society;

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Zhang, J., Barin, G. B., Furrer, R., Du, C.-Z., Wang, X.-Y., Müllen, K., et al. (2023). Determining the Number of Graphene Nanoribbons in Dual-Gate Field-Effect Transistors. Nano Letters, 23(18), 8474-8480. doi:10.1021/acs.nanolett.3c01931.

Cite as: https://hdl.handle.net/21.11116/0000-000D-C776-E

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