Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs 
substrate using AlSb interfacial misfit array

Korkmaz, M.; Arikan, B.; Suyolcu, Y. E.; Aslan, B.; Serincan, U.

Datensatz

DATENSATZ AKTIONENEXPORT

Zur Ablage hinzufügen

Lokale TagsFreigabegeschichteDetailsÜbersicht

Freigegeben

Zeitschriftenartikel

Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array

MPG-Autoren

Suyolcu, Y. E.
Max Planck Society;

Externe Ressourcen

Es sind keine externen Ressourcen hinterlegt

Volltexte (beschränkter Zugriff)

Für Ihren IP-Bereich sind aktuell keine Volltexte freigegeben.

Volltexte (frei zugänglich)

Es sind keine frei zugänglichen Volltexte in PuRe verfügbar

Ergänzendes Material (frei zugänglich)

Es sind keine frei zugänglichen Ergänzenden Materialien verfügbar

Zitation

Korkmaz, M., Arikan, B., Suyolcu, Y. E., Aslan, B., & Serincan, U. (2018). Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array. Semiconductor Science and Technology, 33(3): 035002.

Zitierlink: https://hdl.handle.net/21.11116/0000-000E-E067-1

Zusammenfassung

We report on the growth and opto-electronic characterization of type-II InAs/GaSb superlattice (SL) mid-wavelength infrared pin photodetector grown on a GaAs substrate. AlSb interfacial misfit array was employed at the GaAs buffer/GaSb epilayer interface to reduce the dislocation density of the SL structure grown on the lattice mismatched GaAs substrate. Optical and electrical performance of this sample (SL-GaAs) were then compared with the reference sample of the same structure grown on a GaSb substrate (SL-GaSb). At 80 K, the dark current density and the detectivity values of the pin photodetectors were recorded as 5.40. x. 10-3 A cm-2 and 2.34. x. 1010 cm Hz0.5W(-1) for the SL-GaAs and 9.50. x. 10(-4) A cm(-2) and 4.70. x. 1010 cm Hz0.5W(-1) for the SL-GaSb, respectively.