Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs 
substrate using AlSb interfacial misfit array

Korkmaz, M.; Arikan, B.; Suyolcu, Y. E.; Aslan, B.; Serincan, U.

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Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array

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Suyolcu, Y. E.
Max Planck Society;

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Citation

Korkmaz, M., Arikan, B., Suyolcu, Y. E., Aslan, B., & Serincan, U. (2018). Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array. Semiconductor Science and Technology, 33(3): 035002.

Cite as: https://hdl.handle.net/21.11116/0000-000E-E067-1

Abstract

We report on the growth and opto-electronic characterization of type-II InAs/GaSb superlattice (SL) mid-wavelength infrared pin photodetector grown on a GaAs substrate. AlSb interfacial misfit array was employed at the GaAs buffer/GaSb epilayer interface to reduce the dislocation density of the SL structure grown on the lattice mismatched GaAs substrate. Optical and electrical performance of this sample (SL-GaAs) were then compared with the reference sample of the same structure grown on a GaSb substrate (SL-GaSb). At 80 K, the dark current density and the detectivity values of the pin photodetectors were recorded as 5.40. x. 10-3 A cm-2 and 2.34. x. 1010 cm Hz0.5W(-1) for the SL-GaAs and 9.50. x. 10(-4) A cm(-2) and 4.70. x. 1010 cm Hz0.5W(-1) for the SL-GaSb, respectively.