Characterization of individual layers in a bilayer electron system produced in 
a wide quantum well

Dorozhkin, S.; Kapustin, A.; Fedorov, I.; Umansky, V.; von Klitzing, K.; Smet, J.

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Characterization of individual layers in a bilayer electron system produced in a wide quantum well

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von Klitzing, K.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Smet, J.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Research Group Solid State Nanophysics (Jurgen H. Smet), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Dorozhkin, S., Kapustin, A., Fedorov, I., Umansky, V., von Klitzing, K., & Smet, J. (2018). Characterization of individual layers in a bilayer electron system produced in a wide quantum well. Journal of Applied Physics, 123(8): 084301.

Cite as: https://hdl.handle.net/21.11116/0000-000E-D630-A

Abstract

Here, we report on a transparent method to characterize individual layers in a double-layer electron system, which forms in a wide quantum well, and to determine their electron densities. The technique relies on the simultaneous measurement of the capacitances between the electron system and gates located on either side of the well. Modifications to the electron wave function due to the population of the second subband and the appearance of an additional electron layer can be detected. The magnetic field dependence of these capacitances is dominated by quantum corrections caused by the occupation of Landau levels in the nearest electron layer. The technique should be equally applicable to other implementations of a double layer electron system. Published by AIP Publishing.