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High-Temperature Thermoelectricity in LaNiO3–La2CuO4 Heterostructures

MPS-Authors
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Gregori,  G.
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;

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Yordanov,  P.
Department Solid State Spectroscopy (Bernhard Keimer), Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Thin Film Technology (Gennady Logvenov), Max Planck Institute for Solid State Research, Max Planck Society;

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Cristiani,  G.
Scientific Facility Thin Film Technology (Gennady Logvenov), Max Planck Institute for Solid State Research, Max Planck Society;

Benckiser,  E.
Max Planck Society;

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Keimer,  B.
Department Solid State Spectroscopy (Bernhard Keimer), Max Planck Institute for Solid State Research, Max Planck Society;

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van Aken,  P. A.
Scientific Facility Stuttgart Center for Electron Microscopy (Peter A. van Aken), Max Planck Institute for Solid State Research, Max Planck Society;

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Habermeier,  H.-U.
Department Solid State Spectroscopy (Bernhard Keimer), Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Thin Film Technology (Gennady Logvenov), Max Planck Institute for Solid State Research, Max Planck Society;
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;

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Logvenov,  G.
Scientific Facility Thin Film Technology (Gennady Logvenov), Max Planck Institute for Solid State Research, Max Planck Society;

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Maier,  J.
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Kaya, P., Gregori, G., Baiutti, F., Yordanov, P., Suyolcu, Y. E., Cristiani, G., et al. (2018). High-Temperature Thermoelectricity in LaNiO3–La2CuO4 Heterostructures. ACS Applied Materials & Interfaces, 10(26), 22786-22792.


Cite as: https://hdl.handle.net/21.11116/0000-000E-D220-0
Abstract
Transition metal oxides exhibit a high potential for application in the field of electronic devices, energy storage, and energy conversion. The ability of building these types of materials by atomic layer-by-layer techniques provides a possibility to design novel systems with favored functionalities. In this study, by means of the atomic layer-by-layer oxide molecular beam epitaxy technique, we designed oxide heterostructures consisting of tetragonal K2NiF4-type insulating La2CuO4 (LCO) and perovskite-type conductive metallic LaNiO3 (LNO) layers with different thicknesses to assess the heterostructure-thermoelectric property-relationship at high temperatures. We observed that the transport properties depend on the constituent layer thickness, interface intermixing, and oxygen-exchange dynamics in the LCO layers, which occurs at high temperatures. As the thickness of the individual layers was reduced, the electrical conductivity decreased and the sign of the Seebeck coefficient changed, revealing the contribution of the individual layers where possible interfacial contributions cannot be ruled out. High-resolution scanning transmission electron microscopy investigations showed that a substitutional solid solution of La-2(CuNi)O-4 was formed when the thickness of the constituent layers was decreased.