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Journal Article

Investigation of LaAlO3-SrTiO3 field-effect transistors under hydrostatic pressure


Mannhart,  J.
Department Solid State Quantum Electronics (Jochen Mannhart), Max Planck Institute for Solid State Research, Max Planck Society;

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Kuerten, L., Zabaleta, J., Parks, S. C., Mannhart, J., & Boschker, H. (2018). Investigation of LaAlO3-SrTiO3 field-effect transistors under hydrostatic pressure. Applied Physics Letters, 113(14): 143507.

Cite as: https://hdl.handle.net/21.11116/0000-000E-D1C2-A
We have manufactured oxide field-effect transistors using the electron system at the LaAlO3-SrTiO3 interface as a drain-source channel and measured the devices under a hydrostatic pressure of up to 1.8 GPa. These studies of oxide transistors in the high-pressure regime demonstrate remarkable stability of the devices against gate leakage and resilience to mechanical strain. They show that oxide transistors can be operated in a wide range of pressures and temperatures and open the road for future studies of oxide materials and their possible applications in electronics. Published by AIP Publishing.