Investigation of LaAlO3-SrTiO3 field-effect transistors under hydrostatic 
pressure

Kuerten, L.; Zabaleta, J.; Parks, S. C.; Mannhart, J.; Boschker, H.

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Investigation of LaAlO₃-SrTiO₃ field-effect transistors under hydrostatic pressure

MPS-Authors

/persons/resource/persons280275

Mannhart, J.
Department Solid State Quantum Electronics (Jochen Mannhart), Max Planck Institute for Solid State Research, Max Planck Society;

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Kuerten, L., Zabaleta, J., Parks, S. C., Mannhart, J., & Boschker, H. (2018). Investigation of LaAlO₃-SrTiO₃ field-effect transistors under hydrostatic pressure. Applied Physics Letters, 113(14): 143507.

Cite as: https://hdl.handle.net/21.11116/0000-000E-D1C2-A

Abstract

We have manufactured oxide field-effect transistors using the electron system at the LaAlO3-SrTiO3 interface as a drain-source channel and measured the devices under a hydrostatic pressure of up to 1.8 GPa. These studies of oxide transistors in the high-pressure regime demonstrate remarkable stability of the devices against gate leakage and resilience to mechanical strain. They show that oxide transistors can be operated in a wide range of pressures and temperatures and open the road for future studies of oxide materials and their possible applications in electronics. Published by AIP Publishing.