Roles of Carrier Doping, Band Gap, and Electron Relaxation Time in the 
Boltzmann Transport Calculations of a Semiconductor’s Thermoelectric Properties

Katsura, Y.; Takagi, H.; Kimura, K.

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Roles of Carrier Doping, Band Gap, and Electron Relaxation Time in the Boltzmann Transport Calculations of a Semiconductor’s Thermoelectric Properties

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Takagi, H.
Department Quantum Materials (Hidenori Takagi), Max Planck Institute for Solid State Research, Max Planck Society;

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Katsura, Y., Takagi, H., & Kimura, K. (2018). Roles of Carrier Doping, Band Gap, and Electron Relaxation Time in the Boltzmann Transport Calculations of a Semiconductor’s Thermoelectric Properties. Materials Transactions, 59, 1013-1021.

引用: https://hdl.handle.net/21.11116/0000-000E-D462-4

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