Formation of Thin Oxide Layer on Surface of Copper Caused by Implantation of 
High-Energy Oxygen Ions

Khaydukov, Y. N.; Soltwedel, O.; Marchenko, Y. A.; Khaidukova, D. Y.; Csik, A.; Acartürk, T.; Starke, U.; Keller, T.; Guglya, A. G.; Kazdayev, K. R.

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Formation of Thin Oxide Layer on Surface of Copper Caused by Implantation of High-Energy Oxygen Ions

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Acartürk, T.
Scientific Facility Interface Analysis (Ulrich Starke), Max Planck Institute for Solid State Research, Max Planck Society;

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Starke, U.
Scientific Facility Interface Analysis (Ulrich Starke), Max Planck Institute for Solid State Research, Max Planck Society;

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Keller, T.
Department Solid State Spectroscopy (Bernhard Keimer), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Khaydukov, Y. N., Soltwedel, O., Marchenko, Y. A., Khaidukova, D. Y., Csik, A., Acartürk, T., et al. (2017). Formation of Thin Oxide Layer on Surface of Copper Caused by Implantation of High-Energy Oxygen Ions. Journal of Surface Investigation, 11(1), 206-210.

Cite as: https://hdl.handle.net/21.11116/0000-000E-D074-4

Abstract

Combination of neutron and X-ray reflectometry was used to study the depth profile of 100 nm thin copper films with implanted oxygen ions with energy E = 10-30 keV and fluencies D = (0.2-5.4) x10(16) cm(-2). The oxygen ion implantation at 30 keV was shown to lead to formation of 3 nm thick layer on the surface. Density and copper-oxygen stoichiometry of the observed surface layer was close to Cu2O oxide. We attribute the Cu2O oxide formation to highly mobilized copper atoms generated by stimulated ion implantation.