Graphene Ribbon Growth on Structured Silicon Carbide

Stöhr, A.; Baringhaus, J.; Aprojanz, J.; Link, S.; Tegenkamp, C.; Niu, Y.; Zakharov, A. A.; Chen, C.; Avila, J.; Asensio, M. C.; Starke, U.

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Graphene Ribbon Growth on Structured Silicon Carbide

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Chen, C.
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;
Former Research Groups, Max Planck Institute for Solid State Research, Max Planck Society;

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Starke, U.
Scientific Facility Interface Analysis (Ulrich Starke), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Stöhr, A., Baringhaus, J., Aprojanz, J., Link, S., Tegenkamp, C., Niu, Y., et al. (2017). Graphene Ribbon Growth on Structured Silicon Carbide. Annalen der Physik, 529(11): 1700052.

Cite as: https://hdl.handle.net/21.11116/0000-000E-D00C-A

Abstract

Structured Silicon Carbide was proposed to be an ideal template for the production of arrays of edge specific graphene nanoribbons (GNRs), which could be used as a base material for graphene transistors. We prepared periodic arrays of nanoscaled stripe-mesas on SiC surfaces using electron beam lithography and reactive ion etching. Subsequent epitaxial graphene growth by annealing is differentiated between the basal-plane mesas and the faceting stripe walls as monitored by means of atomic force microscopy (AFM). Microscopic low energy electron diffraction (-LEED) revealed that the graphene ribbons on the facetted mesa side walls grow in epitaxial relation to the basal-plane graphene with an armchair orientation at the facet edges. The -band system of the ribbons exhibits linear bands with a Dirac like shape corresponding to monolayer graphene as identified by angle-resolved photoemission spectroscopy (ARPES).