Growth Technology and Characteristics of Thin Strontium Iridate Films and 
Iridate-Cuprate Superconductor Heterostructures

Petrzhik, A.; Cristiani, G.; Logvenov, G.; Pestun, A.; Andreev, N.; Kislinskii, Y.; Ovsyannikov, G.

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Growth Technology and Characteristics of Thin Strontium Iridate Films and Iridate-Cuprate Superconductor Heterostructures

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Cristiani, G.
Scientific Facility Thin Film Technology (Gennady Logvenov), Max Planck Institute for Solid State Research, Max Planck Society;

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Logvenov, G.
Scientific Facility Thin Film Technology (Gennady Logvenov), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Petrzhik, A., Cristiani, G., Logvenov, G., Pestun, A., Andreev, N., Kislinskii, Y., et al. (2017). Growth Technology and Characteristics of Thin Strontium Iridate Films and Iridate-Cuprate Superconductor Heterostructures. Technical Physics Letters, 43(6), 554-557.

Cite as: https://hdl.handle.net/21.11116/0000-000E-CFEC-0

Abstract

A technology for epitaxial growth of thin films of strontium iridate (Sr2IrO4) and related heterostructures with cuprate superconductor (Sr2IrO4/YBa2Cu3O7-delta) has been proposed and developed. It is established that the two-layer structure grows epitaxially and the cuprate superconductor layer has the same critical temperature as that (similar to 91 K) of an autonomous film. Crystallographic parameters of the obtained iridate films are close to tabulated values and the temperature dependence of their electric resistivity is consistent with published data.