Induction heating effect on the performance of flexible MoS2 field-effect 
transistors

Shin, J.; Choi, J.; Kim, D.; Jang, H.; Yun, J.; Na, J.; Kim, G.

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Induction heating effect on the performance of flexible MoS₂ field-effect transistors

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Na, J.
Max Planck Society;

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Citation

Shin, J., Choi, J., Kim, D., Jang, H., Yun, J., Na, J., et al. (2017). Induction heating effect on the performance of flexible MoS₂ field-effect transistors. Applied Physics Letters, 111(15): 153105.

Cite as: https://hdl.handle.net/21.11116/0000-000E-D166-3

Abstract

We investigated the induction heating effect on device characteristics of flexible molybdenum disulfide (MoS2) field-effect transistors (FETs). A polyimide film was employed as a flexible substrate, and poly(3,4-ethylenedioxythiophene):polystyrene sulfonate was coated on the flexible substrate as a bottom gate. After the annealing process on the flexible MoS2 FETs by induction heating, the field effect mobility was enhanced from 2.13 to 5.58 cm(2)/V.s with the slight increase of the on-off ratio from 5.17 x 10(2) to 1.98 x 10(3). Moreover, the low field mobility was almost unchanged from 7.75 to 7.33 cm(2)/V.s, indicating that the induction heating mainly contributed to the enhancement of the device performances by contact improvement between electrodes and MoS2. With the simple model of the diode and resistor connected in series, it was confirmed that the Schottky diode disappeared with contact enhancement. Our findings can contribute to the contact improvement with minimum damage when low dimensional nanomaterials are used as channel materials on flexible substrates. Published by AIP Publishing.