Electrical Characteristics of Field-Effect Transistors based on Chemically 
Synthesized Graphene Nanoribbons

Zschieschang, U.; Klauk, H.; Müller, I. B.; Strudwick, A. J.; Hintermann, T.; Schwab, M. G.; Narita, A.; Feng, X.; Müllen, K.; Weitz, R. T.

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Electrical Characteristics of Field-Effect Transistors based on Chemically Synthesized Graphene Nanoribbons

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Zschieschang, U.
Research Group Organic Electronics (Hagen Klauk), Max Planck Institute for Solid State Research, Max Planck Society;

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Klauk, H.
Research Group Organic Electronics (Hagen Klauk), Max Planck Institute for Solid State Research, Max Planck Society;

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Weitz, R. T.
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Research Group Solid State Nanophysics (Jurgen H. Smet), Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Zschieschang, U., Klauk, H., Müller, I. B., Strudwick, A. J., Hintermann, T., Schwab, M. G., et al. (2015). Electrical Characteristics of Field-Effect Transistors based on Chemically Synthesized Graphene Nanoribbons. Advanced Electronic Materials, 1(3): 1400010.

Cite as: https://hdl.handle.net/21.11116/0000-000E-CD2A-D

Abstract

The electronic properties of chemically synthesized graphene nanoribbons (GNRs) are investigated in a field-effect transistor (FET) configuration. The FETs are fabricated by dispersing GNRs into an aqueous dispersion, depositing the GNRs onto an insulating substrate, and patterning of metal contacts by electron-beam lithography. At room temperature, the GNR FET shows a large drain current of 70 mu A, very good charge injection from the contacts, saturation of the drain current at larger drain-source voltages, and an on/off current ratio of 2. The small on/off current ratio can be explained by either the unfavorable transistor geometry or by the unintentional agglomeration of two or more GNRs in the channel. Furthermore, it is demonstrated that, by quantum-chemical calculations, the bandgap of a GNR dimer can be as small as 30% of the bandgap of a GNR monomer.