Field-Effect Transistors with Submicrometer Gate Lengths Fabricated from LaAlO3
-SrTiO3-Based Heterostructures

Woltmann, C.; Harada, T.; Boschker, H.; Srot, V.; van Aken, P. A.; Klauk, H.; Mannhart, J.

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Field-Effect Transistors with Submicrometer Gate Lengths Fabricated from LaAlO₃-SrTiO₃-Based Heterostructures

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van Aken, P. A.
Scientific Facility Stuttgart Center for Electron Microscopy (Peter A. van Aken), Max Planck Institute for Solid State Research, Max Planck Society;

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Klauk, H.
Research Group Organic Electronics (Hagen Klauk), Max Planck Institute for Solid State Research, Max Planck Society;

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Mannhart, J.
Department Solid State Quantum Electronics (Jochen Mannhart), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Woltmann, C., Harada, T., Boschker, H., Srot, V., van Aken, P. A., Klauk, H., et al. (2015). Field-Effect Transistors with Submicrometer Gate Lengths Fabricated from LaAlO₃-SrTiO₃-Based Heterostructures. Physical Review Applied, 4(6): 064003.

Cite as: https://hdl.handle.net/21.11116/0000-000E-CD54-D

Abstract

The possible existence of short-channel effects in oxide field-effect transistors is investigated by exploring field-effect transistors with various gate lengths fabricated from LaAlO3-SrTiO3 heterostructures. The studies reveal the existence of channel-length modulation and drain-induced barrier lowering for gate lengths below 1 mu m, with a characteristic behavior comparable to semiconducting devices. With the fabrication of field-effect transistors with gate lengths as small as 60 nm, the results demonstrate the possibility to fabricate by electron-beam lithography functional devices based on complex oxides with characteristic lengths of several tens of nanometers.