Low-voltage organic transistors with steep subthreshold slope fabricated on 
commercially available paper

Zschieschang, U.; Klauk, H.

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Low-voltage organic transistors with steep subthreshold slope fabricated on commercially available paper

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Zschieschang, U.
Research Group Organic Electronics (Hagen Klauk), Max Planck Institute for Solid State Research, Max Planck Society;

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Klauk, H.
Research Group Organic Electronics (Hagen Klauk), Max Planck Institute for Solid State Research, Max Planck Society;

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Zschieschang, U., & Klauk, H. (2015). Low-voltage organic transistors with steep subthreshold slope fabricated on commercially available paper. Organic Electronics, 25, 340-344.

Cite as: https://hdl.handle.net/21.11116/0000-000E-C9CE-8

Abstract

Organic thin-film transistors were fabricated directly on the surface of commercially available cleanroom paper using the vacuum-deposited small-molecule semiconductor dinaphtho[2,3-b:2',3'-f]thieno[3,2-b] thiophene (DNTT). A thin, high-capacitance gate dielectric that allows the TFTs to be operated with low voltages of 2 V was employed. The TFTs have a charge-carrier mobility of 1.6 cm(2)/Vs, an on/off current ratio of 106, and a subthreshold slope of 90 mV/decade. In addition, the TFTs also display a very large differential output resistance, which is an important requirement for applications in analog circuits and active-matrix displays. (C) 2015 Elsevier B.V. All rights reserved.