Nonlinear electrical grain boundary properties in proton conducting Y-BaZrO3 
supporting the space charge depletion model

Shirpour, M.; Merkle, R.; Lin, C. T.; Maier, J.

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Nonlinear electrical grain boundary properties in proton conducting Y-BaZrO₃ supporting the space charge depletion model

MPS-Authors

/persons/resource/persons280302

Merkle, R.
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280238

Lin, C. T.
Scientific Facility Crystal Growth (Masahiko Isobe), Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons217129

Maier, J.
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Shirpour, M., Merkle, R., Lin, C. T., & Maier, J. (2012). Nonlinear electrical grain boundary properties in proton conducting Y-BaZrO₃ supporting the space charge depletion model. Physical Chemistry Chemical Physics, 14(2), 730-740.

Cite as: https://hdl.handle.net/21.11116/0000-000E-C495-C

Abstract

The overall proton conductivity of polycrystalline acceptor-doped BaZrO(3) is limited by the high resistivity of its grain boundaries. To investigate the nature of the electrical response of the grain boundaries as a function of the DC bias, Y-doped BaZrO(3) ceramics with a very large grain size (up to 200 mm) have been prepared in an infrared image furnace. The grains are so large that even individual grain boundaries can be addressed by microelectrodes. DC voltage-dependent resistance and capacitance of the grain boundaries are discussed in terms of the space charge model. The results corroborate carrier depletion (OH(O)(center dot), h(center dot), V(O)(center dot center dot)) as origin of the pronounced grain boundary resistance. This picture fits well into the space charge scenario found for various related oxide materials, and leads to strategies for improving grain boundary conductivity.