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Journal Article

Spin/Charge Redistributions and Oxygen Atom Displacements Induced by Spin Flip and Hole Doping in the CuO2 Layer of High-Temperature Superconductors

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/persons/resource/persons280658

Whangbo,  M. H.
Department Nanochemistry (Bettina V. Lotsch), Max Planck Institute for Solid State Research, Max Planck Society;
Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons279820

Bussmann-Holder,  A.
Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Electronic Structure Theory (Ali Alavi), Max Planck Institute for Solid State Research, Max Planck Society;
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanochemistry (Bettina V. Lotsch), Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280526

Simon,  A.
Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Lee, C., Kan, E. J., Whangbo, M. H., Bussmann-Holder, A., & Simon, A. (2012). Spin/Charge Redistributions and Oxygen Atom Displacements Induced by Spin Flip and Hole Doping in the CuO2 Layer of High-Temperature Superconductors. Journal of Superconductivity and Novel Magnetism, 25(1), 55-59.


Cite as: https://hdl.handle.net/21.11116/0000-000E-C4A7-8
Abstract
On the basis of first principles density functional calculations, we investigated the effect of spin flip and hole doping on the spin, charge and lattice degrees of freedom in the square planar CuO(2) layers of the high-T (c) cuprate superconductors. The local responses of the CuO(2) layers to these point defects appear as spatially extended spin-charge-lattice coupled polarons in ferromagnetic clusters and hence introduce heterogeneity. The results demonstrate the need to treat the spin, charge and lattice degrees of freedom on an equal footing in describing the high-T (c) superconductivity.