Epitaxial growth of lateral quantum dot molecules

Zallo, E.; Atkinson, P.; Wang, L. J.; Rastelli, A.; Schmidt, O. G.

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Epitaxial growth of lateral quantum dot molecules

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Wang, L. J.
Max Planck Society;

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Rastelli, A.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Schmidt, O. G.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Zallo, E., Atkinson, P., Wang, L. J., Rastelli, A., & Schmidt, O. G. (2012). Epitaxial growth of lateral quantum dot molecules. physica status solidi (b), 249(4), 702-709.

Cite as: https://hdl.handle.net/21.11116/0000-000E-C294-F

Abstract

We present an overview and a comparison between three different methods of creating low density lateral In(Ga)As quantum dot molecules (QDMs) embedded in a GaAs matrix. Each of them is based on the use of nanoholes to control the dot nucleation site and generate the QDMs. The three methods used to create suitable nanoholes are: (1) In situ excess gallium droplet etching, where the nanohole shape is modified by overgrowth of a thin GaAs buffer to give QDM nucleation. (2) Ex situ electron-beam lithographic patterning and wet-etching, where the patterned nanohole size is critical for formation of QDMs. (3) In situ strain-selective etching of buried InAs quantum dots by AsBr3. The mechanisms of QDM formation, dependence on growth parameters, advantages and disadvantages of each technique and future challenges are discussed.