Field-effect devices utilizing LaAlO3-SrTiO3 interfaces

Förg, B.; Richter, C.; Mannhart, J.

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Field-effect devices utilizing LaAlO₃-SrTiO₃ interfaces

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Mannhart, J.
Department Solid State Quantum Electronics (Jochen Mannhart), Max Planck Institute for Solid State Research, Max Planck Society;

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Förg, B., Richter, C., & Mannhart, J. (2012). Field-effect devices utilizing LaAlO₃-SrTiO₃ interfaces. Applied Physics Letters, 100(5): 053506.

Cite as: https://hdl.handle.net/21.11116/0000-000E-C248-6

Abstract

Using LaAlO3-SrTiO3 bilayers, we have fabricated field-effect devices that utilize the two-dimensional electron liquid generated at the bilayers' n-type interfaces as drain-source channels and the LaAlO3 layers as gate dielectrics. With gate voltages well below 1V, the devices are characterized by voltage gain and current gain. The devices were operated at temperatures up to 100 degrees C. (C) 2012 American Institute of Physics. [doi:10.1063/1.3682102]